| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e52e7ad9df6ef99419f4da0ed11ee7f4 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-14 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 |
| filingDate |
2006-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2009-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a6e64e4bc0bffb89e4d2e0e4b5b4b5cb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b7bed90cee68da2269f987a942bdde03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff4998bdccf577f800cf3e0e1ebb53fb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99bc0dc91c688f41d3200299f2e3bda6 |
| publicationDate |
2009-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7625448-B2 |
| titleOfInvention |
Inlet system for an MOCVD reactor |
| abstract |
The invention relates to a device for depositing especially crystalline layers on at least one especially crystalline substrate in a process chamber comprising a top and a vertically opposing heated bottom for receiving the substrates. A gas-admittance body forming vertically superimposed gas-admittance regions is used to separately introduce at least one first and one second gaseous starting material, said starting materials flowing through the process chamber with a carrier gas in the horizontal direction. The gas flow homogenises in an admittance region directly adjacent to the gas-admittance body, and the starting materials are at least partially decomposed, forming decomposition products which are deposited on the substrates in a growth region adjacent to the admittance region, under continuous depletion of the gas flow. An additional gas-admittance region of the gas-admittance body is essential for one of the two starting materials, in order to reduce the horizontal extension of the admittance region. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010261340-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10130958-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9057128-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8491720-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8138069-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-D904640-S
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009149008-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8841221-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010215854-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8568529-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8183132-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8778079-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8110889-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010273318-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010258049-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010273290-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8361892-B2 |
| priorityDate |
2004-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |