Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-109 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0752 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0755 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0395 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-032 |
filingDate |
2006-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2009-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59088276e14dbbee6f71a02c3643aa51 |
publicationDate |
2009-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-7615329-B2 |
titleOfInvention |
Branching self-assembling photoresist with decomposable backbone |
abstract |
By using a branched long chained chain scission polymer as a photoresist for high resolution extreme ultraviolet (EUV), e-beam or 193 nanometer lithography applications, a relatively higher molecular weight polymer with good mechanical properties may be achieved. In addition, by using chain scission technology, line edge roughness and resolution may be improved at the same time. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9551929-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016147149-A1 |
priorityDate |
2006-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |