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publicationDate 2009-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7611825-B2
titleOfInvention Photolithography method to prevent photoresist pattern collapse
abstract A method comprises forming a BARC layer on a substrate, treating the BARC layer to make its surface hydrophilic, forming a photoresist layer on the treated BARC layer, exposing the photoresist layer to a predetermined pattern, and developing the photoresist layer to form patterned photoresist.
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