Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d9f3ca41550d315642580237250c5b0 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K77-111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-468 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09B57-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-474 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-621 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-24 |
filingDate |
2005-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2009-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_083f0f35f3d819d2889a8423233ef5a8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e1fe1de0cd89477ad3960be247d8ab7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_93436595c12425085e06763d30cc0042 |
publicationDate |
2009-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-7579619-B2 |
titleOfInvention |
N,N′-di(arylalkyl)-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors |
abstract |
A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, a substituted or unsubstituted arylalkyl moiety. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8314265-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8530270-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011090953-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8450726-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8212243-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011137139-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011137137-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011137133-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8431433-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8404892-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011149699-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011180784-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8411489-B2 |
priorityDate |
2005-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |