http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7571639-B2

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filingDate 2007-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2009-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_157c58bc90c3f15485da57f27eab05a1
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publicationDate 2009-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7571639-B2
titleOfInvention Method of correcting opaque defect of photomask using atomic force microscope fine processing device
abstract An opaque defect is processed by scanning with a high load or height fixed mode using a probe harder than a pattern material of a photomask at the time of going scanning, and is observed by scanning with a low load or intermittent contact mode at the time of returning scanning so as to detect an ending point of the opaque defect by the height information. When there is a portion reaching to a glass substrate as an ending point, this portion is not scanned by the high load or height fixed mode in the next processing, and only a portion not reaching to the ending point is scanned by the high load or height fixed mode.
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