| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fe57ee29c3dcd7d93c13d7898e91c6b9 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-924
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-31678
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-30 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28575
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44 |
| filingDate |
2007-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2009-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_56c4e3ac203fa3816e7269e0074b50e1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9665b0bd1ead45a136b24f8dca7018b0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3d59ae84f15375540d8442c8a9e36384
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee22e5248aef68e6337cff4b8ce32463
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac12956a4252aa41e135f59543634e24 |
| publicationDate |
2009-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7563711-B1 |
| titleOfInvention |
Method of forming a carbon nanotube-based contact to semiconductor |
| abstract |
Manufacturers encounter limitations in forming low resistance ohmic electrical contact to semiconductor material P-type Gallium Nitride (p-GaN), commonly used in photonic applications, such that the contact is highly transparent to the light emission of the device. Carbon nanotubes (CNTs) can address this problem due to their combined metallic and semiconducting characteristics in conjunction with the fact that a fabric of CNTs has high optical transparency. The physical structure of the contact scheme is broken down into three components, a) the GaN, b) an interface material and c) the metallic conductor. The role of the interface material is to make suitable contact to both the GaN and the metal so that the GaN, in turn, will make good electrical contact to the metallic conductor that interfaces the device to external circuitry. A method of fabricating contact to GaN using CNTs and metal while maintaining protection of the GaN surface is provided. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9018734-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012262965-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8021747-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8603836-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9250204-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8138568-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011227043-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008171193-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9157887-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008088219-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014339592-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9012946-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9068936-B2 |
| priorityDate |
2001-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |