http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7557025-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0331 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76811 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763 |
| filingDate | 2005-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2009-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73425a480fc80de4fd091c9eede4cf92 |
| publicationDate | 2009-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-7557025-B2 |
| titleOfInvention | Method of etching a dielectric layer to form a contact hole and a via hole and damascene method |
| abstract | A method of etching a dielectric layer by a conductive mask includes providing the dielectric layer on a substrate, forming a pattern conductive mask on the dielectric layer, the pattern conductive mask contacting with the substrate, processing a dry etching on the dielectric layer by the pattern conductive mask. Because the conductive mask disperses a lot of electric charges, the electric charges are not able to be stored on the dry etched dielectric layer, and the multilevel interconnects and the elements under the dielectric layer will not burst. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8765600-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012104471-A1 |
| priorityDate | 2005-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.