| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02691
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1296
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02686
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02422
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02675 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate |
2006-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2009-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ab8970cfc9b86ef9ceb3db8c4bb44952
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a950c61a4532a68d3096f2fac72086b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c1c1d3c8caa7c7832b642c502ecb530
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ae4b5353afd62704bd7ced8f38678ab2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_129a70e2df82d4faa3d06db4aa6fe9e8 |
| publicationDate |
2009-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7553778-B2 |
| titleOfInvention |
Method for producing a semiconductor device including crystallizing an amphorous semiconductor film |
| abstract |
A method for producing a semiconductor device includes irradiating an amorphous semiconductor film on an insulating material with a pulsed laser beam having a rectangular irradiation area, while scanning in a direction intersecting a longitudinal direction of the irradiation area, thereby forming a first polycrystalline semiconductor film, and irradiating a part of the amorphous semiconductor film with the laser beam, while scanning in a longitudinal direction intersecting the irradiation area, the part superposing the first polycrystalline semiconductor film and being adjacent to the first polycrystalline semiconductor film, thereby forming a second polycrystalline semiconductor film. The laser beam has a wavelength in a range from 390 nm to 640 nm, and the amorphous semiconductor film has a thickness in a range from 60 nm to 100 nm. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010112790-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8080450-B2 |
| priorityDate |
2005-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |