http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7550766-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_37eca35591a598b124616f188740caf8 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-484 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-231 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K19-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78681 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78651 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-00 |
| filingDate | 2006-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2009-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a66d4d2506ad7631d84680d3e1187f6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fee36ec7cafaa53dc5ec7df26813038d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d3ca8811f65c1be0dd19fcf139643f4f |
| publicationDate | 2009-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-7550766-B2 |
| titleOfInvention | Thin film transistor (TFT) and flat panel display including the TFT |
| abstract | A Thin Film Transistor (TFT) that can reduce leakage current and can prevent crosstalk between adjacent TFTs includes: a substrate; a gate electrode disposed on the substrate; a source electrode and a drain electrode separated from each other and insulated from the gate electrode; and a semiconductor layer which is insulated from the gate electrode, contacts each of the source and drain electrodes, and has grooves that separate at least a region of the semiconductor layer between the source and drain electrodes from the adjacent TFT. Each groove passes at least a portion of the semiconductor layer corresponding to the source and drain electrodes, and a projection image generated when each groove that passes at least a portion of the semiconductor layer corresponding to the source and drain electrodes is projected onto the source and drain electrodes covers the source and drain electrodes except for a portion of the source electrode that faces the drain electrode and a portion of the drain electrode that faces the source electrode. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11264432-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011292479-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8462411-B2 |
| priorityDate | 2005-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.