| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-978
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13067 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7854
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7853
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7856
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-845
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66818 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84 |
| filingDate |
2006-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2009-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d5cfc28bacf8d42ec45cad3fabbd5cb7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d95a0836f45847d80b1b7929e79736a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1bbeeb385485ef93762ab37712bbc67b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09ea67f852809d6bc9a9a259c2d25fd0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d5b67e2da97fd009230a32fc81892613 |
| publicationDate |
2009-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7550333-B2 |
| titleOfInvention |
Nonplanar device with thinned lower body portion and method of fabrication |
| abstract |
A nonplanar semiconductor device having a semiconductor body formed on an insulating layer of a substrate. The semiconductor body has a top surface opposite a bottom surface formed on the insulating layer and a pair of laterally opposite sidewalls wherein the distance between the laterally opposite sidewalls at the top surface is greater than at the bottom surface. A gate dielectric layer is formed on the top surface of the semiconductor body and on the sidewalls of the semiconductor body. A gate electrode is formed on the gate dielectric layer on the top surface and sidewalls of the semiconductor body. A pair of source/drain regions are formed in the semiconductor body on opposite sides of the gate electrode. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8324030-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8324940-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8097515-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8129247-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8513068-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8520430-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9935102-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011133161-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011133164-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011133162-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011133167-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011133165-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011133169-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013265099-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8507892-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8389347-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8772755-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9437445-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017148789-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8536563-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8680589-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8143113-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011168982-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008296667-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8361907-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9537015-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9184301-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8062938-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8455334-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9711645-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010109057-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9953976-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9406789-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9105482-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8304817-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9666726-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9263554-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8173993-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8384065-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009057731-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10312377-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10236290-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7968442-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8835231-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011165738-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011163355-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8722492-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010151645-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8586966-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8723162-B2 |
| priorityDate |
2004-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |