| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1089 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76876
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44 |
| filingDate |
2005-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2009-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38711cc4d45c5c2e5e7d5c33ff556cfd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cde6814ca5b5d8f997438d7528eb16d2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cbbdffe28d175e2af337664b53d67143
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ae803885bba1b399f89d6bebc44285b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5aee9713fd27f2441b8011d812b20158 |
| publicationDate |
2009-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7541282-B2 |
| titleOfInvention |
Methods of forming metal-nitride layers in contact holes |
| abstract |
A metal layer can be formed in an integrated circuit by forming a metal-nitride layer in a recess including a first concentration of nitrogen in the metal-nitride layer at a bottom of the recess that is less than a second concentration of nitrogen in the metal-nitride layer proximate an opening of the recess. A metal layer can be formed on the metal-nitride layer including in the recess. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10147782-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10615250-B2 |
| priorityDate |
2004-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |