| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08J2367-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-30455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-31701 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08J7-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F16L59-00 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-317
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G21K5-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/A61N5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-425
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B05C11-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G21G5-00 |
| filingDate |
2005-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2009-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5352bfcb9f3f79508ce2adf7beb981f3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_126e901450513f730471f612a49f52e4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2523e2a41145e519f91fd76c7ef03805
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_85ce6cb2a4473714c7920ad25bd8e12c |
| publicationDate |
2009-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7537940-B2 |
| titleOfInvention |
Method of manufacturing electronic device capable of controlling threshold voltage and ion implanter controller and system that perform the method |
| abstract |
A method of manufacturing an electronic device, which can obtain sufficient manufacturing margins and reduce a defect rate by compensating for a threshold voltage variation caused by the variation of a critical dimension (CD) of a gate electrode. An ion implanter controller and an ion implantation system perform the method. In the method, an ion implantation recipe for forming a junction contact plug of a transistor formed on the wafer is adjusted based on the measured CD. Then, ions are implanted into the wafer by using the adjusted ion implantation recipe. All defects that may occur in the transistor during previous manufacturing steps can be repaired after the transistor is formed, thus enhancing manufacturing margins. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2480861-C1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9136187-B2 |
| priorityDate |
2004-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |