| abstract |
Embodiments of the present invention are directed to an apparatus for generating a precursor for a semiconductor processing system ( 320 ). The apparatus includes a canister ( 300 ) having a sidewall ( 402 ), a top portion and a bottom portion. The canister ( 300 ) defines an interior volume ( 438 ) having an upper region ( 418 ) and a lower region ( 434 ). In one embodiment, the apparatus further includes a heater ( 430 ) partially surrounding the canister ( 300 ). The heater ( 430 ) creates a temperature gradient between the upper region ( 418 ) and the lower region ( 434 ). Also claimed is a method of forming a barrier layer from purified pentakis (dimethylamido) tantalum, for example a tantalum nitride barrier layer by atomic layer deposition. |