| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-26 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-91
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-1806
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F2-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-1807 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
| filingDate |
2006-06-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2009-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c34b5f5581dd5e7b71e9e1e41bee2be5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_edbf5c22075915ebe86d22ec326bd5d8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f61704e4c3ba87d0876aa715ed6c017c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c2d009502405a45eabff0ba286f8a3b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f29da5c64ed5657a67866ba3f8230b60 |
| publicationDate |
2009-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7514319-B2 |
| titleOfInvention |
Copolymers, polymer resin composition for buffer layer method of forming a pattern using the same and method of manufacturing a capacitor using the same |
| abstract |
The invention is directed to particular polymer compositions that may be generally characterized by the formula: n nwherein the variables L, M and N represent the relative molar fractions of the monomers and satisfy the expressions 0<L≦0.8; 0<M≦0.25; 0<N≦0.35; and L+M+N=1; and, wherein R 1 , R 2 and R 3 are independently selected from C 1 -C 6 alkyls and derivatives thereof. The invention is also directed to polymer compositions that, when used to form a buffer layer or pattern, can be more easily removed from the surface of a semiconductor substrate, thereby increasing productivity and/or reducing the likelihood of defects and failures associated with residual photoresist material. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11532550-B2 |
| priorityDate |
2005-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |