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publicationDate 2009-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7511321-B2
titleOfInvention Method for forming a dielectric layer and related devices
abstract A dielectric layer may be formed by depositing the dielectric layer to an intermediate thickness and applying a nitridation process to the dielectric layer of intermediate thickness. The dielectric layer may then be deposited to the final, desired thickness.
priorityDate 2003-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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