| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2868 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2856 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate |
2006-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2009-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8de0720b08748beca142f31da753491a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f0ebba01ac659b926a356f4525f60ab2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74181d3faf3c932c95e92fa008e9a16a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ce8fccca3c8e7532ea1245dca0a081d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e365e73865fc07868509be549837b0a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38ddc10d9dcfff878faf593c0f6c0de6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa8aaf09fd02e94ca56c87028759f573 |
| publicationDate |
2009-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7504847-B2 |
| titleOfInvention |
Mechanism for detection and compensation of NBTI induced threshold degradation |
| abstract |
The embodiments of the invention provide an apparatus and method for detection and compensation of negative bias temperature instability (NBTI) induced threshold degradation. A semiconductor device is provided comprising at least one stress device having a voltage applied to its gate node and at least one reference device having a zero gate-to-source voltage. A controller is also provided to configure node voltages of the device and/or the reference device to reflect different regions of device operations found in digital and analog circuit applications. Moreover, the controller measures a difference in current between the stress device and the reference device to determine whether NBTI induced threshold degradation has occurred in the stress device. The controller also adjusts an output power supply voltage of the stress device until a performance of the stress device matches a performance of the reference device to account for the NBTI induced threshold degradation. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2023079961-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9535473-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9733302-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9222968-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011101990-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8717051-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8248095-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9251890-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014191777-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011095818-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8330534-B2 |
| priorityDate |
2006-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |