| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C2218-1525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C2218-153 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02131
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C17-245 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2003-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2009-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8bb0d7b9b14b8372da13cc4d3ce9890a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_69cb39e13963a5ae13b973d17b74eb8e |
| publicationDate |
2009-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7491659-B2 |
| titleOfInvention |
APCVD method of forming silicon oxide using an organic silane, oxidizing agent, and catalyst-formed hydrogen radical |
| abstract |
In forming various types of insulating films in manufacture of a semiconductor device, carbon is gasified into CH x , COH etc. during film formation by adding active hydrogen and nitrogen oxide to reduce the carbon content during the film formation, and the effect of blocking impurities such as alkali metals is improved. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8148272-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8309472-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9401396-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011053349-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011065281-A1 |
| priorityDate |
1995-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |