| abstract |
A Ti-precursor for forming a Ti-containing thin layer represented by the formula I below, a method of preparing the same, a method of preparing a Ti-containing thin layer by employing the Ti-precursor and the Ti-containing thin layer are provided: n nwhereinn X 1 and X 2 are independently F, Cl, Br or I; n is 0, 1, 2, 3, 4 or 5; m is 0, 1, 2, 3, 4, 5, 6 or 7; and R 1 and R 2 are independently a linear or branched C 1-10 alkyl group. The Ti precursor for forming the Ti-containing thin layer can be deposited at a deposition temperature of approximately 150° C.˜200° C., and a Ti-containing thin layer with a high performance character can be prepared. |