| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_592ee574006d6fc44b558913e9535cfc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-484
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-221
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-221
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0669
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-484 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-335 |
| filingDate |
2006-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2009-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0618d6e3e1ed119d1164a77545daf976
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9dc5212ed7f75c088531267aa095f6fe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d53bc68b71ef650abff9e582d04a7e2e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e12f0856fbaf40d9f66f705b607351b1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9899a6e521ff63f721be79f314e13c4c |
| publicationDate |
2009-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7482206-B2 |
| titleOfInvention |
Semiconductor devices having nano-line channels and methods of fabricating the same |
| abstract |
A semiconductor device includes a substrate, a gate electrode on the substrate and source and drain electrodes disposed at respective sides of the gate electrode. The device further includes a nano-line passing through the gate electrode and extending into the source and drain electrodes and having semiconductor characteristics. The nano-line may include a nano-wire and/or a nano-tube. A gate insulating layer may be interposed between the nano-line and the gate electrode. The source and drain electrodes may be disposed adjacent respective opposite sidewalls of the gate electrode, and the gate insulating layer may be further interposed between the source and drain electrodes and the gate electrode. Fabrication methods for such devices are also described. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006216897-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010068862-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8395218-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102569409-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102569410-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7642578-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009209071-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010314604-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9406789-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102569410-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008079041-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8703566-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008128760-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013265099-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100924668-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7803675-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8110471-B2 |
| priorityDate |
2005-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |