Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-124 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-123 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-85 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-15 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B44-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-207 |
filingDate |
2005-05-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2009-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b60551b49b6b1702f3c899fbd1f57d8c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_086f96f1eb3c99c60d348831462cf55d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78aa83dfb9454443017f3ff090b2314b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e432e03d83281a7953d3188091956c0e |
publicationDate |
2009-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-7476908-B2 |
titleOfInvention |
Light emitting device |
abstract |
An object of the invention is to provide a light emitting device in which the variation in emission spectrum depending on an angle for seeing a surface through which light is emitted is reduced. The light emitting device of the invention includes a first insulating layer formed over a substrate, a second insulating layer formed over the first insulating layer, and a semiconductor layer formed over the second insulating layer. A gate insulating layer is formed to cover the second insulating layer and the semiconductor layer. A gate electrode is formed over the gate insulating layer. A first interlayer insulating layer is formed to cover the gate insulating layer and the gate electrode. An opening is formed through the first interlayer insulating layer, the gate insulating layer and the second insulating layer. A second interlayer insulating layer is formed to cover the first insulating layer and the opening. A light emitting element is formed over the opening. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012097954-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8426861-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8658444-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9349780-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9219102-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011210348-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014183472-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013105789-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11320709-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9564537-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8604490-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9614101-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9647245-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015034932-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9165955-B2 |
priorityDate |
2004-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |