http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7473650-B2
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_edc7ad06ab91150c5556ccaa5b0a5185 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1031 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3122 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76808 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7681 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-469 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0336 |
filingDate | 2006-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2009-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2fb5421759602e7b721e361997868bfc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ffa7ceba42b3936967d4c17473513e8b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_50992dc95bd1ba3278406de4f8c0df0a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f622f99bf5a0102b366aaa33663cf676 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5c131a8fb883d9db411fa698ff0caa6 |
publicationDate | 2009-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | US-7473650-B2 |
titleOfInvention | Poly(organosiloxane) materials and methods for hybrid organic-inorganic dielectrics for integrated circuit applications |
abstract | A method for making an integrated circuit is disclosed as comprising depositing alternating regions of electrically conductive and dielectric materials on a substrate, wherein an area of dielectric material is formed by: a silane precursor having a fully or partially fluorinated first organic group comprising an unsaturated carbon-carbon double bond, the fully or partially fluorinated organic group bound to silicon in the silane precursor; forming from the silane precursor a hybrid organic-inorganic material having a molecular weight of at least 500 on a substrate; and increasing the molecular weight of the hybrid material by exposure to heat, electromagnetic radiation or electron beam so as to break the unsaturated carbon-carbon double bond and cross link via the fully or partially fluorinated organic group. Also disclosed is a method for making an integrated circuit is disclosed as comprising: reacting a compound of the general formula X3MOR3 3 , where X3 is a halogen, M is silicon, and OR3 is alkoxy; with a compound of the general formula R1M1; where R1 is selected from alkyl, alkenyl, aryl and alkynyl and wherein R1 is partially or n nfully fluorinated; and M1 is an element from group I of the periodic table; so as to form a compound of the general formula R1MOR3 3 ; hydrolyzing and condensing R1MOR3 3 so as to form a hybrid organic-inorganic material with a molecular weight of at least 500; depositing the hybrid organic-inorganic material on a substrate as an insulator in an integrated circuit; depositing, before or after depositing the hybrid material, an electrically conductive material within the integrated circuit. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9856281-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7883764-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010072644-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008167396-A1 |
priorityDate | 2002-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 532.