| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0338 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate |
2006-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2009-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_72bca4de59fce0e969aa9c1bbdd9d001
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aeb4a733f07318fcb9d53dd0e6e47619
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_629d1abf7e41125d6fd99b51f6407be4 |
| publicationDate |
2009-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7473647-B2 |
| titleOfInvention |
Method of forming pattern using fine pitch hard mask |
| abstract |
A method of forming a fine pattern of a semiconductor device using a fine pitch hard mask is provided. A first hard mask pattern including first line patterns formed on an etch target layer of a substrate with a first pitch is formed. A first layer including a top surface where a recess is formed between adjacent first line patterns is formed. A second hard mask pattern including second line patterns within the recess is formed. An anisotropic etching process is performed on the first layer using the first and the second line patterns as an etch mask. Another anisotropic etching process is performed on the etch target layer using the first and the second hard mask patterns as an etch mask. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011124198-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8012881-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010055910-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009035584-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11348788-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8980756-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7608546-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8389400-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009318667-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I487065-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8216948-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008160653-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009061624-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8211806-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10522348-B2 |
| priorityDate |
2005-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |