http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7447065-B2

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-34
filingDate 2008-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2008-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68e6a576abca9b044e7999bf13670ffa
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publicationDate 2008-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7447065-B2
titleOfInvention Reducing read disturb for non-volatile storage
abstract A system is disclosed for reducing or removing a form of read disturb in a non-volatile storage device. One embodiment seeks to prevent read disturb by eliminating or minimizing boosting of the channel of the memory elements. For example, one implementation prevents or reduces boosting of the source side of the NAND string channel during a read process. Because the source side of the NAND string channel is not boosted, at least one form of read disturb is minimized or does not occur.
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priorityDate 2005-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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