| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-00 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11504
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11509
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11507
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-94 |
| filingDate |
2007-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2008-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ae81c17444bc70727268b0c504c71b26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d45e52e4aee185e4917767ba9dd11f9b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_033e74599d68a1a47d546de19296d7cb |
| publicationDate |
2008-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7446362-B2 |
| titleOfInvention |
Semiconductor memory device and method of manufacturing the same |
| abstract |
A semiconductor memory device includes a semiconductor substrate having a first region and a second region, a transistor placed in the first region of the semiconductor substrate, a first insulating film formed on the semiconductor substrate in the first and second regions and on the transistor, a first ferroelectric capacitor formed on the first insulating film in the first region and electrically connected to the transistor, a hydrogen barrier film formed above the first ferroelectric capacitor and above the first insulating film in the first and second regions, a first contact penetrating the hydrogen barrier film in the first region and electrically connected to the first ferroelectric capacitor, and a second contact which penetrates the hydrogen barrier film in the second region and which is in a floating state. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010052021-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7956395-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008197391-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011304017-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8368176-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009059659-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9991126-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8324671-B2 |
| priorityDate |
2003-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |