Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44 |
filingDate |
2006-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2008-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45fffd5f1b6b41100ddf7cb235817f7e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba5bf9554f63da55fc7c4a664e5cf106 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d5c4ac97305bbcc1f3a4cd094d805e5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a07cd232444a1d55457c3f9b93b18394 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f62ce5ecbf65f91ab24278668537abf1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5ee7070f7738a11f1b955cb73b574037 |
publicationDate |
2008-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-7446042-B2 |
titleOfInvention |
Method for silicide formation on semiconductor devices |
abstract |
A method for forming nickel silicide includes degassing a semiconductor substrate that includes a silicon surface. After the degassing operation, the substrate is cooled prior to a metal deposition process, during a metal deposition process, or both. The cooling suppresses the temperature of the substrate to a temperature less than the temperature required for the formation of nickel silicide. Nickel diffusion is minimized during the deposition process. After deposition, an annealing process is used to urge the formation of a uniform silicide film. In various embodiments, the metal film may include a binary phase alloy containing nickel and a further element. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7622386-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013334581-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9070664-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008138985-A1 |
priorityDate |
2006-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |