| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_669c01133740c5233f2c8738904ea3af |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K2102-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-12493
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24355
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24479
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-12007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S428-917 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-844
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-024 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-32 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11B5-64
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-02 |
| filingDate |
2006-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2008-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_14e9d9f6fa20eb249514e0656dacfffa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_02328e4ece9d00bba22ece92f95421e9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a61f0b5e3242dcb045dbaab3bab220d |
| publicationDate |
2008-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7442428-B2 |
| titleOfInvention |
Gas barrier substrate |
| abstract |
The main object of the present invention is to provide a gas barrier substrate having a high gas barrier property without a ruggedness, a pin hole or the like in the gas barrier layer. The present invention solves the problem by providing a gas barrier substrate having a base material, a planarization layer formed on the base material, and a gas barrier layer comprising a deposition film formed on the planarization layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8513678-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9576876-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2272928-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9431574-B2 |
| priorityDate |
2003-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |