http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7427770-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04 |
| filingDate | 2005-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2008-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_70555451a4c04401673e758eda7a3e98 |
| publicationDate | 2008-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-7427770-B2 |
| titleOfInvention | Memory array for increased bit density |
| abstract | A memory array having a plurality of resistance variable memory units and method for forming the same are provided. Each memory unit includes a first electrode, a resistance variable material over the first electrode, and a first second-electrode over the resistance variable material. The first second-electrode is associated with the first electrode to define a first memory element. Each memory unit further includes a second second-electrode over the resistance variable material. The second-second electrode is associated with the first electrode to define a second memory element. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010295011-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8030636-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7663133-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7791058-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7968927-B2 |
| priorityDate | 2005-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 79.