| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1af8df51ce24ca931ae718fb747f6aa0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76808
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76817
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44 |
| filingDate |
2006-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2008-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf13a7b77fe3ce49e95433ce286eaaf7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9f9dd858fa619f5cd500e7f859df292
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_133b4ad7b2e7908ebbc6f12cde6ea2c0 |
| publicationDate |
2008-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7422981-B2 |
| titleOfInvention |
Method for manufacturing semiconductor device by using dual damascene process and method for manufacturing article having communicating hole |
| abstract |
A method for manufacturing a semiconductor device is provided, in which the lengths of a wiring trench and a via hole in a depth direction are easily controlled. A component having a first insulating film is prepared on a substrate, and a layer is disposed on the above-described first insulating film. A mold having a pattern is imprinted on the above-described layer so as to form a second insulating film having a wiring trench and a first via, the pattern corresponding to the wiring trench and the first via. Thereafter, the above-described first insulating film is etched by using the above-described second insulating film as a mask so as to form a second via, which is connected to the first via, in the first insulating film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7598172-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008293237-A1 |
| priorityDate |
2005-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |