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filingDate 2003-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2008-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e1a66955c727b781b6b2ec4efd488199
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publicationDate 2008-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7414298-B2
titleOfInvention Super self-aligned collector device for mono-and hetero bipolar junction transistors, and method of making same
abstract The invention relates to a process of forming a compact bipolar junction transistor (BJT) that includes forming a self-aligned collector tap adjacent the emitter stack and an isolation structure. A base layer is formed from epitaxial silicon that is disposed in the substrate.
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