Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_47cc435e1d443f13180f7766df104d9d |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1409 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 |
filingDate |
2000-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2008-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a1b04078b4f3d5acb583f42822146897 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a40d349f03617619ed73ebcb7fd90686 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01cd19963303720d983c66c36402f1e2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_31ed0e7191632a5f9009755f39fe3f4c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f10aaf0644c32782110d35efc1b73760 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a1ad3e8d897abeccfd95c13d0e0427ae |
publicationDate |
2008-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-7410409-B1 |
titleOfInvention |
Abrasive compound for CMP, method for polishing substrate and method for manufacturing semiconductor device using the same, and additive for CMP abrasive compound |
abstract |
The present invention discloses a CMP abrasive comprising cerium oxide particles, a dispersant, an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished and water, a method for polishing a substrate comprising polishing a film to be polished by moving a substrate on which the film to be polished is formed and a polishing platen while pressing the substrate against the polishing platen and a polishing cloth and supplying the CMP abrasive between the film to be polished and the polishing cloth, a method for manufacturing a semiconductor device comprising the steps of the above-mentioned polishing method, and an additive for a CMP abrasive comprising an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished, and water. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10144849-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006156635-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007075291-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010301014-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010267315-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8900335-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8425276-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8062547-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010210109-A1 |
priorityDate |
1999-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |