http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7407886-B2

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8f063b8222ec3c8e746a415e7f364473
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-485
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44
filingDate 2006-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2008-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe1268086677a223debd1c35525ba77e
publicationDate 2008-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7407886-B2
titleOfInvention Method for preparing a contact plug structure
abstract A contact plug structure for a checkerboard dynamic random access memory comprises a body portion, two leg portions connected to the body portion and a dielectric block positioned between the two leg portions. Each leg portion is electrically connected to a deep trench capacitor arranged in an S-shape manner with respect to the contact plug structure via a doped region isolated by a shallow trench isolation structure. Preferably, the body portion and the two leg portions can be made of the same conductive material selected from the group consisting of polysilicon, doped polysilicon, tungsten, copper and aluminum, while the dielectric block can be made of material selected from the group consisting of borophosphosilicate glass. Particularly, the contact plug can be prepared by dual-damascene technique. Since the overlapped area between the contact plug structure and a word line can be dramatically decreased, the bit line coupling (BLC) can be effectively reduced.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013034957-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8912092-B2
priorityDate 2006-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 33.