http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7393614-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36f8253f3d0d59bcd9259217d4385d10 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-70466 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-70 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-30 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-00 |
| filingDate | 2004-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2008-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b0baca28798cf3c26ec942dcca18432 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2edab0122d48ce86d5e1c292e93584a1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_721f5e8de743b5eabb5431d8ece4fb44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa575b1ee54f60a9bcb0d7baae2b6483 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ffcf7a4e7a5085c078941886fa18b3d0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0af87088bde725bf4f5da3ac03cb7781 |
| publicationDate | 2008-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-7393614-B2 |
| titleOfInvention | Set of masks including a first mask and a second trimming mask with a semitransparent region having a transparency between 20% and 80% to control diffraction effects and obtain maximum depth of focus for the projection of structure patterns onto a semiconductor wafer |
| abstract | A set of at least two masks for the projection of structure patterns coordinated with one another by a projection system into the same photosensitive layer of a semiconductor wafer, in which the set of at least two masks includes a primary mask having an opaque structure element, which is formed at a first position on the first mask. A second mask of the set, for example a trimming mask, which is assigned to the first mask, can have a semitransparent region assigned to the structure element of the first mask. The semitransparent region can be formed at the same position on the second mask as the opaque structure element on the first mask. With the aid of the suitable choice of the transparency of the semitransparent region, it is possible to enable an undesirable resist region to be trimmed away for enlargement of a process window during exposure of the photosensitive layer on the semiconductor wafer. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012040278-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8431291-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102015104473-B4 |
| priorityDate | 2003-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.