http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7390748-B2

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-461
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
filingDate 2004-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2008-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2375104208cc097a5b96c6948c4d178f
publicationDate 2008-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7390748-B2
titleOfInvention Method of forming a polishing inhibiting layer using a slurry having an additive
abstract A polishing inhibiting layer forming additive for a slurry, the slurry so formed, and a method of chemical mechanical polishing are disclosed. The polishing inhibiting layer is formed through application of the slurry to the surface being polished and is removable at a critical polishing pressure. The polishing inhibiting layer allows recessed or low pattern density locations to be protected until a critical polishing pressure is exceeded based on geometric and planarity considerations, rather than slurry or polishing pad considerations. With the additive, polishing rate is non-linear relative to polishing pressure in a recessed/less pattern dense location. In one embodiment, the additive has a chemical structure: [CH 3 (CH 2 ) x N(R)]M, wherein M is selected from the group consisting of: Cl, Br and I, x equals an integer between 2 and 24, and the R includes three carbon-based functional groups, each having less than eight carbon atoms.
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priorityDate 2004-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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