| abstract |
An image sensor device and fabrication method thereof wherein a substrate having at least one shallow trench isolation structure therein is provided. At least one photosensor and at least one light emitting element, e.g., such as MOS or LED, are formed in the substrate. The photosensor and the light emitting element are isolated by the shallow trench isolation structure. An opening is formed in the shallow trench isolation structure to expose part of the substrate. An opaque shield is formed in the opening to prevent photons from the light emitting element from striking the photosensor. |