http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7378303-B2

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66765
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84
filingDate 2006-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2008-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_02fecf56afc897c936318fbafe9173b9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_48827066209e51f0b37558551cb2ea8e
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publicationDate 2008-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7378303-B2
titleOfInvention Method of fabricating thin film transistor
abstract A method for fabricating a thin film transistor is provided. A conductive layer is formed on a substrate. A patterned mask is formed on the conductive layer to cover a predetermined thin film transistor (TFT) area, and at least one portion of the conductive layer exposed by the patterned mask are removed. A laser is applied to form a laser hole in the patterned mask to expose a portion of the conductive layer and the laser hole substantially corresponds to a channel region of the predetermined TFT area. The exposed conductive layer is etched to form source and drain electrodes on opposite sides of the channel region.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011210331-A1
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priorityDate 2006-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 28.