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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-544
filingDate 2002-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2008-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2008-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7374956-B2
titleOfInvention Method for improved metrology by protecting photoresist profiles
abstract A method for preserving semiconductor feature opening profiles for metrology examination including providing semiconductor wafer having a process surface comprising semiconductor feature openings; blanket depositing over the semiconductor feature openings to substantially fill the semiconductor feature openings at least one layer of material comprising silicon oxide; and, preparing a portion of the semiconductor wafer in cross sectional layout for metrology examination.
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Total number of triples: 27.