| abstract |
A light-emitting element using GaN. On a substrate ( 10 ), formed are an SiN buffer layer ( 12 ), a GaN buffer layer ( 14 ), an undoped GaN layer ( 16 ), an Si-doped n-GaN layer ( 18 ), an SLS layer ( 20 ), an undoped GaN layer ( 22 ), an MQW light-emitting layer ( 24 ), an SLS layer ( 26 ), and a p-GaN layer ( 28 ), forming a p electrode ( 30 ) and an n electrode ( 32 ). The MQW light-emitting layer ( 24 ) has a structure in which InGaN well layers and AlGaN barrier layers are alternated. The Al content ratios of the SLS layers ( 20 , and 26 ) are more than 5% and less than 24%. The In content ratio of the well layer in the MQW light-emitting layer ( 24 ) is more than 3% and less than 20%. The Al content ratio of the barrier layer is more than 1% and less than 30%. By adjusting the content ratio and film thickness of each layer to a desired value, the light luminous efficiency for wavelength of less than 400 nm is improved. |