| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4404
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23G5-00 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B08B9-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23G5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B05D7-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2003-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2008-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b92f87f9b0d6542dfb963d81f04d8aa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea2f4c8b008f38b35cae5d7f6c399222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea6dd6b4f72b0e220775a3075b2aad55
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e0299dcd598af28beb6f62b97bf15c6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7535312ace812d59831a879fcfec0323
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b61b19455e34e18409d6a5b662d628f |
| publicationDate |
2008-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7371427-B2 |
| titleOfInvention |
Reduction of hillocks prior to dielectric barrier deposition in Cu damascene |
| abstract |
Unwanted hillocks arising in copper layers due to formation of overlying barrier layers may be significantly reduced by optimizing various process parameters, alone or in combination. A first set of process parameters may be controlled to pre-condition the processing chamber in which the barrier layer is deposited. A second set of process parameters may be controlled to minimize energy to which a copper layer is exposed during removal of CuO prior to barrier deposition. A third set of process parameters may be controlled to minimize the thermal budget after removal of the copper oxide. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008115726-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9018108-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008075888-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004235292-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108714599-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7604841-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007212847-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7981809-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7723228-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006128161-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005221001-A1 |
| priorityDate |
2003-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |