http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7368399-B2

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763
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filingDate 2006-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2008-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_47581a5c589b38f9a7c18e0639b6d498
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publicationDate 2008-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7368399-B2
titleOfInvention Methods of forming patterned photoresist layers over semiconductor substrates
abstract This invention includes methods of forming patterned photoresist layers over semiconductor substrates. In one implementation, a porous antireflective coating is formed over a semiconductor substrate. A photoresist footer-reducing fluid is provided within pores of the porous antireflective coating. A positive photoresist is formed over the porous antireflective coating having the fluid therein. The positive photoresist is patterned and developed to form a patterned photoresist layer, with the fluid within the pores being effective to reduce photoresist footing in the patterned photoresist layer than would otherwise occur in the absence of the fluid within the pores. Other aspects and implementations are contemplated.
priorityDate 2004-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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