http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7355241-B2

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_72ed91cb20a3ca510bb7e85d7fae504a
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40114
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42328
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788
filingDate 2006-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2008-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59de4c4a688bb05463d5c0ff6671023a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_47ef333672b602a8e5d175ffa7cf041c
publicationDate 2008-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7355241-B2
titleOfInvention Non-volatile memory
abstract A non-volatile memory including a substrate, a select gate, two floating gates, a control gate, and a doped region is described. The select gate is disposed on the substrate. The two floating gates are disposed on both sides of the select gate, and the top surface of the floating gates is higher than that of the select gate forming a hollow structure on the select gate between the two floating gates. The control gate disposed on the substrate covers the select gate and the two floating gates and fills the hollow structure. The doped region is disposed in the substrate on one side of the two floating gates opposite to the select gate.
priorityDate 2005-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 26.