http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7341953-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30621 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31122 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 2006-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2008-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ab6d1687e26e780aefa9c02d61cd3011 |
| publicationDate | 2008-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-7341953-B2 |
| titleOfInvention | Mask profile control for controlling feature profile |
| abstract | A method for etching features into a dielectric layer over a substrate and existent below a polymeric hard mask is provided. The substrate is placed in a plasma processing chamber. Mask features are etched into the polymeric hard mask and necks are formed inadvertently. A plasma treatment process performed before the dielectric etch step process can selectively etch away the necks. As a result, neckless features are created into the polymeric hardmask. Features etched into the underneath dielectric layer through the neckless polymeric hard mask have straight profiles. |
| priorityDate | 2006-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.