http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7339253-B2

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76232
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-00
filingDate 2004-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2008-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5efcc27338ef496bed6d8dfd6d34c34e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_457e30c3e8e8359f9dc6e7423366c6e0
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publicationDate 2008-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7339253-B2
titleOfInvention Retrograde trench isolation structures
abstract Methods are provided for making retrograde trench isolation structures with improved electrical insulation properties. One method comprises the steps of: forming a retrograde trench in a silicon substrate, and forming a layer of silicon oxide on the walls of the trench by thermal oxidation, such that the trench is sealed and a space is formed within the layer of silicon oxide. The space can contain a vacuum or any of a variety of gases depending upon conditions of the thermal oxidation step. Retrograde trench isolation structures containing a space are also provided.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021294130-A1
priorityDate 2004-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 57.