http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7329483-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f7817b2573160dc2388c37d980f776b6 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-325 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-327 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F- |
| filingDate | 2007-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2008-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe4bcd814901d68dfb544ee009c23f46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_105cf14ac915f46b5a4c89371451ceda http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_55bfcdc1e7bc6f0787778b42e69446e3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c24f55c3aa57fa1bf4ee475fa57e43eb |
| publicationDate | 2008-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-7329483-B2 |
| titleOfInvention | Low pH development solutions for chemically amplified photoresists |
| abstract | A method for carrying out positive tone lithography with a carbon dioxide development system is carried out by: (a) providing a substrate, the substrate having a polymer resist layer formed thereon, (b) exposing at least one portion of the polymer resist layer to radiant energy causing a chemical shift to take place in the exposed portion and thereby form at least one light field region in the polymer resist layer while concurrently maintaining at least one portion of the polymer layer unexposed to the radiant energy to thereby form at least one dark field region in the polymer resist layer; (c) optionally baking the polymer resist layer; (d) contacting the polymer resist layer to a carbon dioxide solvent system, the solvent system comprising a polar group, under conditions in which the at least one light field region is preferentially removed from the substrate by the carbon dioxide solvent system as compared to the at least one dark field region; wherein the carbon dioxide solvent system comprises a first phase and a second phase, the first phase comprising carbon dioxide and the second phase comprising a polar fluid, with the at least one light field region being preferentially soluble in the polar fluid as compared to the at least one dark field region. |
| priorityDate | 2002-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 103.