http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7316961-B2

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-65
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
filingDate 2005-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2008-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25afd567a73dc4ee07d3f631180905e8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09257fbb94f768492cf1f43b6a8abeee
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd48bab1b7d9e12bedf93f2993f244e2
publicationDate 2008-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7316961-B2
titleOfInvention Method of manufacturing semiconductor device
abstract Provided is a method of manufacturing a semiconductor device with enhancements of electrical characteristics. The method includes sequentially forming a lower electrode and an insulating layer on a semiconductor substrate, dry-etching a region of the insulating layer corresponding to a capacitor forming region so that the lower electrode is not exposed, forming an inter-insulating layer by wet-etching the insulating layer so that a region of the lower electrode corresponding to the capacitor forming region is exposed, and sequentially forming a dielectric layer and an upper electrode on the capacitor forming region to fabricate a capacitor.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009290410-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8623692-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8120947-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8213220-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010118603-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012149144-A1
priorityDate 2004-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007020944-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005287738-A1
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559561
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419524915
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID82821
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID26042
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID292779
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID962
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419512635
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID415776203
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID451282663
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID518712
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419593443
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419525060
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID453284447
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457707785
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID123105
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24261
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419530175
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5352426
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457707770
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID82899
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457707758
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419520488
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID28179
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID9859353
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID62395

Total number of triples: 49.