| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45557
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45523
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-50 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate |
2005-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2008-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_142c5d9ad481ae6c1ba0df9b24692a7f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa972ad6e2c1a6ea3675d7b9fe587533
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a0448564b3edbd971dbab99b9f54ff8 |
| publicationDate |
2008-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7314838-B2 |
| titleOfInvention |
Method for forming a high density dielectric film by chemical vapor deposition |
| abstract |
A method for forming a high density dielectric film by chemical vapor deposition. The method comprises: (a) a substrate is provided in a processing chamber; (b) a first gas is introduced into the processing chamber with a first pressure and adsorbed on the substrate, wherein the first gas comprises silicon-containing or carbon-containing gas; (c) the first gas is stopped, and the first pressure is lowered to a second pressure; (d) a second gas is introduced into the processing chamber with a third pressure, and forced to react with the first gas absorbed on the substrate and remained in the processing chamber, wherein the second gas comprises oxidizer or reduction agent; (e) the steps (b)˜(d) are repeated until a high density dielectric film is formed on the substrate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11489077-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I563566-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015093913-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9070554-B2 |
| priorityDate |
2005-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |