http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7304000-B2

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filingDate 2004-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2007-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ec0c6366dc007d03e4b8261dd98cb82
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publicationDate 2007-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7304000-B2
titleOfInvention Photoresist trimming process
abstract A photoresist trimming gas compound is provided which will selectively remove a resist foot or scum from the lower portions of sidewalls of a photoresist. Additionally, the trimmer compound hardens or toughens an upper surface of the photoresist thereby strengthening the photoresist. The trimmer compound includes O 2 and at least one other gaseous oxide and is typically utilized in a dry etching process after a trench has been formed in a photoresist The other oxide gases, in addition to the O 2 may include CO 2 , SO 2 and NO 2 .
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Total number of triples: 35.