| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76837
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-04 |
| filingDate |
2006-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2007-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_548ecd265f2c8fb64247bec29de2f574
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2574f54fb449f325d89b5ccac9875369
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db0233e660bd03f3b86247c60ae7b22d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_efc06ea92ce3040da7dded090451249e |
| publicationDate |
2007-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7294588-B2 |
| titleOfInvention |
In-situ-etch-assisted HDP deposition |
| abstract |
A process is provided for depositing an silicon oxide film on a substrate disposed in a process chamber. A process gas that includes a halogen source, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 10 11 ions/cm 3 is formed from the process gas. The silicon oxide film is deposited over the substrate with a halogen concentration less than 1.0%. The silicon oxide film is deposited with the plasma using a process that has simultaneous deposition and sputtering components. The flow rate of the halogen source to the process chamber to the flow rate of the silicon source to the process chamber is substantially between 0.5 and 3.0. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010093151-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013147319-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8910355-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9018108-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7955510-B2 |
| priorityDate |
2003-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |