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filingDate 2004-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2007-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2007-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7291550-B2
titleOfInvention Method to form a contact hole
abstract A example method of forming of a contact hole by removing residue and oxide spacer beside a nitride spacer after a CF containing etch. We provide a gate structure with nitride spacers on the sidewalls of the gate. We provide a dielectric layer (oxide) over the substrate and gate structure. We form a contact photoresist pattern over the oxide dielectric layer. We etch the oxide dielectric layer using fluorocarbons (CxFy) to form contact openings and residual spacer. The photoresist is striped. Preferably, a NF 3 and N 2 and H 2 plasma treatment is performed to deposit a byproducts layer over the residual spacer. The byproducts layer and residual spacer are removed preferably using one of the following processes: (1) heat (2) DI rinse or (3) IR or UV radiation.
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