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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
filingDate 2004-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2007-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_53f21ddcf6cbf14aa0191de5930b14bf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4a8067d959d2c8640a9faa5bb6ff1504
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publicationDate 2007-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7282905-B2
titleOfInvention System and method for IDDQ measurement in system on a chip (SOC) design
abstract System and method for detecting transistor failure in large-scale integrated circuits by measuring IDDQ. A preferred embodiment comprises a switch structure for an integrated circuit made up of a plurality of main switches (such as main switch 410 ) selectively coupling a power sub-domain to a power source pin, a plurality of pi-switches (such as pi-switch 415 ) selectively coupling pairs of power sub-domains, and a plurality of IDDQ switches (such as IDDQ switch 425 ) selectively coupling the power sub-domains to a VIDDQ pin. The pi-switches can decouple the power sub-domains while the IDDQ switches can enable the measurement of the quiescent current in the power sub-domains. The use of pi-switches and IDDQ switches can permit the measurement of the quiescent current in the power sub-domains without requiring the use of isolation buffers and needed to powering on and off the integrated circuit between current measurements in the different power sub-domains.
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Total number of triples: 94.