| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e2c58c30639290256ba6dfd7d615c6bb |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3298
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-6025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24926
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-5445 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B1-16 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B3-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B1-16 |
| filingDate |
2003-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2007-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed83fc885d862d3dd07388a8772b9972
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee4a9aee64c2a0b0f1576fc8438b9eb3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7785fe2c7ee44d7723e4114f10aa743f |
| publicationDate |
2007-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7276460-B2 |
| titleOfInvention |
Low temperature sintering ceramic composition for use in high frequency, method of fabricating the same and electronic component |
| abstract |
A low temperature sintering ceramic composition that can be sintered at a temperature equal to or less than 1000° C. and has low dielectric constant and dielectric loss in a high frequency region of 17 Ghz or more, an electronic component using the same and a method of fabricating the low temperature sintering ceramic are provided. The composition comprises MgO and SiO 2 in sum total in the range of from 64.0 to 99.2% by mass; Bi 2 O 3 in the range of from 0.4 to 33.0% by mass; Li 2 O in the range of from 0.4 to 3.0% by mass; and MgO and SiO 2 are contained in the molar ratio of from 2:1 to 2:3.5, at least part thereof being contained as a complex oxide of Mg and Si. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8481441-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8168555-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010197478-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011108931-A1 |
| priorityDate |
2002-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |